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agilent acpm-7833 cdma1900 (pcs) power amplifier module data sheet description the acpm-7833 is a fully matched cdma power amplifier module. designed around agilent technologies new enhancement mode phemt process, the acpm-7833 offers premium performance in a very small form factor. fully matched to 50 ohms on the input and output. the amplifier has excellent acpr and efficiency performance at max pout and low quiescent features ? operating frequency: 1850 C 1910 mhz ? 28.5 dbm linear output power @ 3.4 v ? high efficiency: 40% pae ? dynamic bias control for low midpower idd ? very low quiescent current with single control voltage ? internal 50 ohm matching networks for both rf in/out ? 3.2 C 4.2 v linear operation ? cdma2000 1xrtt capable ? only 3 smt parts needed ? 4.0 x 4.0 x 1.1 mm smt package applications ? cdma handsets ? datacards ? pdas input vdd1 power input match on chip inter-stage match bias circuit passive output match vdd2 vbias output vcntl single control bias setting for low idq and 40% pae at pout = 28.5 dbm current with a single bias control voltage. for even lower quiescent current, a dynamic bias control circuit can be used by varying the voltage on the vcntl pin between 1.2v to 2.5v. designed in a surface mount rf package, the acpm-7833 is cost and size competitive. the acpm-7833 is another key component of the agilent cdmadvantage rf chipset. .com .com .com .com 4 .com u datasheet
2 maximum ratings [1] parameter min. max. vdd supply voltage 6.0 v power dissipation [2] 2.5 w bias current 1.5 a control voltage (vcntl) 3.0 v amplifier input rf power 10 dbm junction temperature +150 c storage temperature (case temperature) -40 c +100 c notes: 1. operation of this device in excess of any of these limits may cause permanent damage. 2. tcase = 25 c thermal resistance [2] jc = 22.3 c/w recommended operating range of vdd = 3.2 to 4.2 v, ta = -30 to +85 c package marking and dimensions vdd2 (pin 10) gnd rfout gnd gnd 1.1 mm 4.0 mm (sq) vdd1 (pin 1) rfin gnd vcntl vbias gnd agilent acpm-7833 yywwdd xxxx 0.400 0.076 0.850 0.076 0.850 0.076 0.850 0.076 0.850 0.076 2.000 0.076 3.80 0.076 4.000 0.076 3.400 0.076 2.000 0.076 4.000 0.076 1.100 0.076 note: yywwdd: year ? work week ? day xxxx: lot code all units are in mm top view side view bottom view .com .com .com .com .com 4 .com u datasheet
3 electrical characterization information all tests are done in 50 ? system at vdd1=vdd2=vbias = 3.4v, 25 c, unless noted otherwise. parameter units min typ max comments pcs cdma frequency range mhz 1850 1910 gain (fixed cntl voltage) p out = 28.5 dbm db 25.5 27.5 29.5 vcntl= 2.5v p out = 16 dbm 24 26 28 vcntl= 1.8v power added efficiency p out = 28.5 dbm % 38 40 vcntl= 2.5v p out = 16 dbm % 7.5 8.5 vcntl= 1.8v total supply current ma 520 550 p out = 28.5 dbm, vcntl= 2.5v ma 135 156 p out =16 dbm, vcntl= 1.8v ma 31 p out = -5 dbm, vcntl = 1.2v acpr @ 1.25 mhz offset dbc/30 khz -45 -48 p out 28.5 dbm acpr @ 1.98 mhz offset dbc/30 khz -53 -55 p out 28.5 dbm quiescent current ma 62 80 p out 28.5 dbm, vcntl= 2.5v ma 47 60 vcntl = 1.8v ma 25 vcntl = 1.2v vcntl current ma 2.0 2.7 vcntl = 2.5v input vswr (p out = 28.5 dbm) 2.0:1 noise figure db 4.5 noise power @ 80 mhz offset in 1930? 1990 mhz dbm/hz -141 -138 stability (spurious): load vswr 5:1 dbc -50 all phases harmonic suppression: 2fo dbc -30 -38 .com .com .com .com .com 4 .com u datasheet
4 typical performance, data measured in 50 ? system, vdd1=vdd2=vbias = 3.4v, vcntl = 2.5 v, t = 25 c and freq = 1880 mhz unless noted otherwise. pout (dbm) figure 1. gain vs. pout. gain (db) vcntl (v) figure 2. gain vs. vcntl. gain (db) pout (dbm) pae (%) pout (dbm) figure 4. idd vs. output power. idd (ma) pout (dbm) figure 5. idd vs. output power. idd (ma) pout (dbm) figure 6. acpr (1.25 mhz offset) vs. pout. acpr1 (dbc) pout (dbm) acpr2 (dbc) pout (dbm) figure 8. 2nd/3rd harmonics vs. pout. harmonic suppression (dbc) 030 10 5 15 25 20 -50 -55 -60 -65 -70 -75 -80 -85 -90 2nd 3rd 030 10 51525 20 30 29 28 27 26 25 24 23 22 21 20 0 2.8 0.8 0.4 1.2 2.0 2.4 1.6 40 20 0 -20 -40 030 10 5 15 25 20 50 40 30 20 10 0 030 10 5 15 25 20 500 400 300 200 100 0 020 10 515 160 140 120 100 80 60 40 20 0 030 10 51525 20 -40 -45 -50 -55 -60 -65 10 30 20 15 25 -30 -35 -40 -45 -50 figure 3. pae vs. pout. figure 7. acpr (1.98 mhz offset) vs. pout. vcntl=2.5v vcntl=1.6v vcntl=1.2v vcntl=2.5v vcntl=1.6v vcntl=1.2v vcntl=1.2v vcntl=1.6v vcntl=2.5v .com .com .com .com .com 4 .com u datasheet
5 ordering information part number no. of devices container acpm-7833-blk 10 bulk acpm-7833-tr1 1000 7? tape and reel tape dimensions and orientation 1.55 0.05 1.50 (min) 4.38 0.10 1.80 0.10 4.38 0.10 c l 8.00 0.10 4.38 0.10 2.00 0.05 [1] 4.00 0.10 [2] 5.50 0.05 [3] 12.00 0.3 0 1.75 0.10 0.30 0.05 notes: 1. measured from centerline of sprocket hole to centerline of pocket 2. cumulative tolerance of 10 sprocket holes is 0.2 mm 3. all dimensions in millimeters unless otherwise stated. agilent acpm-7833 yywwdd xxxx .com .com .com .com .com 4 .com u datasheet
6 reel drawing notes: 1. reel shall be labeled with the following information (as a minimum). a. manufacturers name or symbol b. agilent technologies part number c. purchase order number d. date code e. quantity of units 2. a certificate of compliance (c of c) shall be issued and accompany each shipment of product. 3. reel must not be made with or contain ozone depleting materials. 4. all dimensions in millimeters (mm) 50 min. 12.4 +2.0 C0.0 18.4 max. 25 min wide (ref) slot for carrier tape insertion for attachment to reel hub (2 places 180 apart) back view front view 178 shading indicates thru slots +0.4 C0.2 21.0 0.8 13.0 0.2 1.5 min. .com .com .com .com .com 4 .com u datasheet
7 application information the following material is presented to assist in general design and use of the apcm-7833. ? 3.0v characterization, for use in data card applications ? cdma2000 1xrtt description and characterization data ? design tips on various methods to control the bias on vcntl pin ? description of acpr measurement methods ? description of agilent evaluation demoboard for acpm-7833 ? ir reflow profile (applicable for all agilent e-phemt pas) 3.0 v characterization, data card applications electrical data all tests are done in 50 ? system at vdd1=vdd2=vbias = 3.0v, 25 c, unless noted otherwise. parameter units min typ max comments 1900 mhz cdma frequency range mhz 1850 1910 gain (fixed cntl voltage) (p out = 28.5 dbm) db 26 vcntl = 2.5v (p out = 13 dbm) db 28 vcntl = 2.5v (p out = -5 dbm) db 28 vcntl = 2.5v power added efficiency p out = 28.0 dbm % 42 vcntl = 2.5v p out = 16 dbm % 8.5 vcntl = 2.5v total supply current ma 500 p out = 28.0 dbm, vcntl= 2.5v 100 p out = 13 dbm, vcntl= 1.6v 30 p out = -5 dbm, vcntl= 1.2v acpr @ 1.25 mhz offset dbc/30 khz -43 p out 28.5 dbm acpr @ 1.98 mhz offset dbc/30 khz -56 p out 28.5 dbm quiescent current ma 60 p out 28.5 dbm, vcntl = 2.5v input vswr (p out = 28.5 dbm) 2.0:1 (p out = 16 dbm) 2.5:1 noise figure db 4.5 noise power @ 80 mhz offset in 1930 - 1990 mhz dbm/hz -141 stability (spurious): load vswr 5:1 dbc -50 all phases harmonic suppression 2fo dbc -40 3fo dbc -40 .com .com .com .com .com 4 .com u datasheet
8 typical performance, data measured in 50 ? system, vdd1=vdd2=vbias = 3.0v, vcntl = 2.5 v, t = 25 c and freq =1880 mhz. figure 11. idd vs. pout. pout (dbm) figure 12. acpr (1.25 mhz offset) vs. pout. acpr1 (dbc) pout (dbm) figure 13. acpr (1.98 mhz offset) vs. pout. acpr2 (dbc) pout (dbm) figure 14. harmonic suppression vs. pout. harmonic suppression (dbc) vcntl (v) figure 15. gain vs. vcntl. gain (db) 030 10 5 15 25 20 -50 -55 -60 -65 -70 -75 -80 -85 -90 pout (dbm) figure 9. gain vs. pout. gain (db) 030 10 5 15 25 20 30 29 28 27 26 25 pout (dbm) figure 10. pae vs. pout. pae (%) 030 10 5 15 25 20 50 40 30 20 10 0 pout (dbm) idd (ma) 030 10 5 15 25 20 500 400 300 200 100 0 030 10 5 15 25 20 -40 -45 -50 -55 -60 -65 10 30 20 15 25 -30 -35 -40 -45 -50 2nd 3rd 0 2.8 0.8 0.4 1.2 2.0 2.4 1.6 40 20 0 -20 -40 .com .com .com .com .com 4 .com u datasheet
9 cdma 2000 1xrtt characterization system description cdma2000 is the tias standard for third generation (3g) technol- ogy and is an evolution of the is- 95 cdma format. cdma2000 includes 1x rtt in the single- carrier mode and 3x rtt in the multi-carrier mode. this paper describes the cdma2000 1x rtt approach and its performance with agilent 4x4 cdma pas, acpm-7833. cdma2000 1x rtt, being an extension of the is-95 standard, has a chip rate of 1.2288mchip/s. however, in 1xrtt, the reverse link transmits more than one code channel to accommodate the high data rates. the minimum configura- tion consists of a reverse pilot (r-pilot) channel for synchro- nous detection by the base transceiver system (bts) and a reverse fundamental channel (r-fch) for voice. additional channels such as the reverse supplemental channels (r-schs) and the reverse dedicated channel (r-dcch) are used to send data or signaling informa- tion. channels can exist at different rates and power levels. table 1 shows the transmitter specification in cdma2000 reverse link. typical channel configurations below are based on the transmitter test condition in the reverse link. 1) ?basic? voice only configuration ? r-pich @ -5.3 db ? r-fch @ -1.5 db 9.6 kbps 2) voice and data configuration ? r-pich @ -5.3 db ? r-fch @ -4.54 db 9.6 kbps ? r-sch1 @ -4.54 db 9.6 kbps specification spread rate1 erp at maximum output power lower limit +23 dbm upper limit +30 dbm minimum controlled output power -50 dbm/1.23 mhz waveform quality factor and frequency accuracy >0.944 sr1, band class 0(cellular band) sr1, band class1(pcs band) 885 khz to 1.98 mhz 1.25 mhz to 1.98 mhz less stringent of -42 dbc/30 khz less stringent of -42 dbc/30 khz or -54 dbm/1.23 mhz or -54 dbm/1.23 mhz 1.98 mhz to 3.125 mhz 1.98 mhz to 2.25 mhz less stringent of -54 dbc/30 khz less stringent of -50 dbc/30 khz or -54 dbm/1.23 mhz or -54 dbm/1.23 mhz 3.125 mhz to 5.625 mhz 2.25 mhz to 6.25 mhz -13 dbm/100 khz -13 dbm/1 mhz spurious emission at maximum rf output power offset frequency within the range table 1. transmitter specification in reverse link. 3) voice and control configuration ? r-pich @ -5.3 db ? r-fch @ -3.85 db 9.6 kbps ? r-dcch @ -3.85 db 9.6 kbps 4) control channel only configuration ? r-pich @ -5.3 db ? r-dcch @ -1.5 db 9.6 kbps .com .com .com .com .com 4 .com u datasheet
10 combinations of these channels will increase the peak to average power ratio for higher data rates. the complementary cumulative distribution function (ccdf) measurement characterizes the peak to average power statistics of cdma2000 reverse link. for reference, the system specifica- tions of peak to average power ratio of is-95 and cdma2000 ix rtt are 3.9 db and 5.4 db at 1% ccdf respectively. higher peak to average power ratio requires a higher margin, both in higher power gain and in improved thermal stability for pa linearity to meet the minimum system specifications. the test results below for the acpm-7833 show the compliance to the system linearity specifica- tions with 4 channel configura- tions, representing a broad cross- section of cdma2000 1x rtt environments. test result of acpm-7833 using cdma2000 1x rtt signal test condition - pa evaluation board with vdd1=vdd2=vbias = 3.4v, vcntl = 2.5v, frequency = 1880 mhz. test result with each cha nnel configuration. 1.25 mhz 1.25 mhz -1.98 mhz +1.98 mhz channel ivdd(ma) pin(dbm) acpr(dbc) acpr(dbc) acpr(dbc) acpr(dbc) pout(dbm) basic 451.0 -0.14 -52.6 -51.5 -60.2 -60 28 voice+data 435.0 0.52 -46.2 -45.7 -58.0 -58.3 28 voice+cntl 439.0 0.50 -45.5 -44.9 -60.1 -60 28 cntl only 299.0 -2.56 -49.1 -48.8 -57.7 -57.5 25.5 peak to average power ration (pout = 16 dbm) ccdf(%) basic voice + data voice + cntl cntl only 10 2.11 3.37 3.44 4.00 1 3.74 4.83 5.21 5.75 0.1 4.68 5.68 6.24 6.73 0.01 5.15 6.20 6.76 7.18 0.001 5.36 6.53 7.11 7.39 0.0001 5.48 6.63 7.17 7.45 eia/tia-98-d indicates a 2.5 db allowed back off in power for control channel only configuration. .com .com .com .com .com 4 .com u datasheet
11 design tips to use vcntl pin power mode pa_on vcntl power range shut down low 0v ? high power high 2.5v 28.5 dbm to duplexer battery vcntl pa txic switch circuit for pa baseband ic pa_on enable vdd1 vdd2 vbias vcntl pmic or ldo note: pmic: power management ic ldo: low drop output (regulator) power amplifier control using vcntl pin on acpm-7833 power amplifier control scheme in cdma systems is one of the important and challenging aspects of cdma-based handset design. handset designers must balance maintaining adequate linearity while optimizing efficiency at high, medium and low output power levels. the primary method to achieve these goals is to adjust the bias of the pa as a function of output power. theoretically, the best efficiency would be achieved when the bias of the pa is continually adjusted based on the output power requirement of the pa. however, implementing this type of circuit can be complex and costly. therefore several different approaches have been developed to provide an acceptable trade- off between optimum efficiency and optimum manufacturability. this application section reviews four methods of controlling the bias of a cdma power amplifier: fixed, step, logical and dynamic. 1. fixed bias control using a fixed bias point on the pa is the traditional method, and it is the simplest. for example, the recommended value of the fixed control voltage on the vcntl pin for the acpm-7833 is 2.5v. the vcntl pin on the pa is controlled by pa_on pin of the baseband ic. when pa_on is high, the output rf signal of the pa is enabled, enabling the subscriber unit to transmit the required data. the switch circuit also controls the on/off state of the pa. below is an example of how to control the the output of the pa using pa_on and vcntl pins. .com .com .com .com .com 4 .com u datasheet
12 2. step bias control and dynamic bias control (if controled pdm1) the pdm1 output from the baseband ic can be used to create a software-programmable voltage, to be used at the phone designers discretion. to get high efficiency and better acpr, the phone designers can change control voltage of the pa by adjusting pdm1 voltage accord- ing to output power of pa. a caution when using this power mode pa_on vcntl power range shut down low 0v ? low power high 1.2v ~ -5 dbm mid power high 1.6v -5 dbm ~ 13 dbm high power high 2.5v 13 dbm ~ 28.5 dbm approachcareful consideration must be made to to avoid an abrupt discontinuity in the output signal when the step bias control voltage is applied. the figure below is an example of how to control the pa for multiple bias points using the pa_on and vcntl pins. to duplexer battery vdd1 vdd2 vcntl pa txic switch circuit for pa baseband ic c1 r1 pa_on pdm1 vbias enable if pdm1 can be controlled then same circuit can be used for dynamic bias control .com .com .com .com .com 4 .com u datasheet
13 3. dynamic bias control alternate implementation phone designers can use tx_adc_adj pin of the baseband ic to get dynamic bias control with vcntl pin of pa. tx_adc_adj is a pdm output pin produced by the tx agc subsystem and used to control the gain of the tx signal prior to the pa. the variable output levels from two inverting operational amplifiers, generated and compared by tx_adc_adj, provide dynamic control voltages for the vcntl of 1.0v ~ 2.7v with a 0.1v step. av = -(v1/vin) = -r3/r2, v1 = -(r3/r2)vin, vo = -(r5/r4)v1= [(r5 * r3)/(r4 * r2)] * vin the using of combination of two pins, pdm1 and tx_adc_adj, is another method of realizing a dynamic bias control scheme. the two op amps control the vcntl voltage levels with com- pared and integrated circuits. to duplexer battery pa _ + _ r3 v1 r4 r5 r2 vin c1 r1 pa_on tx_adc_adj baseband ic tx i c vcontrol switch circuit enable vdd1 vdd2 vcntl vbias to duplexer battery pa + _ + _ pa_on tx_adc_adj pdm1 baseband ic txic vcontrol switch circuit enable vdd1 vdd2 vcntl vbias .com .com .com .com .com 4 .com u datasheet
14 acpr measurement method adjacent-channel power ratio (acpr) is used to characterize the distortion of power amplifiers and other subsystems for their tendency to cause interference with neighboring radio channels or systems. the acpr measure- ment often is specified as the ratio of the power spectral density (psd) of the cdma main channel to the psd measured at figure 16. cdma adjacent-channel power ratio measurement. several offset frequencies. for the cellular band (824 ~ 849 mhz transmitter channel), the two offsets are at 885 khz and 1.98 mhz and the measurement resolution bandwidth specified is 30 khz. these offsets are at 1.25 mhz and 1.98 mhz for the pcs band (1850 ~ 1910 mhz transmitter channel). 0 -10 -20 -30 -40 -50 -60 -70 -80 30 khz 30 khz 30 khz 30 khz 1.23 mhz 1 st acpr-u 1 st acpr-l 2 nd acpr-l = 1.98 mhz 2 nd acpr-u = 1.98 mhz offset frequency 1st acpr (dbc) 2nd acpr (dbc) frequency (mhz) .com .com .com .com .com 4 .com u datasheet
15 acpr testing diagram test pa test setup figure 17. acpr test equipment setup. figure 18. acpr measurement using vsa transmitter tester. acpm-7833 test result using vsa transmitter tester 8593e spectrum analyzer e4406a vsa transmitter tester power divider 20 db attenuator 3 db attenuator cdma pa acpm-7833 vdd1 vdd2 vbias vcntl e4437b cdma signal generator dc power supply ch1 ch2 ch3 ch4 .com .com .com .com .com 4 .com u datasheet
16 acpr test results using spectrum analyzer the meaning of 16 db the accurate acpr measurement using spectrum analyzer needs to consider the normalization factor that is dependent on the resolution bandwidth, rbw, settings. the above figure (mea- surement shown at 836 mhz for general example) shows a com- parison of the different acpr measurement results as a func- tion of various rbw values. as the rbw is reduced, less power is captured during the measure- ment and consequently the channel power is recorded as a figure 19. example acpr measurement using spectrum analyzer. smaller value. for example, if the main channel power is measured as 28 dbm in a 1.23 mhz band- width, its power spectral density is 28 dbm/1.23 mhz, which can be normalized to 11.87 dbm/ 30 khz. the equation used to calculate the normalization factor of power spectral density is: normalization factor = 10log[normalization bw/current bw (spectrum analyzer rbw)] = 10log[1.23x10 6 /30x10 3 ] = 16.13 db since the acpr in an is95 system is specified in a 1.23 mhz bandwidth, a channel power that is measured using a different rbw, can be normalized to reflect the channel power as if it was measured in a 1.23 mhz bandwidth. the difference in channel power measured in 30 khz bandwidth and the channel power measured in a 1.23 mhz bandwidth is 16 db. ref 42.8 dbm at 30 db rbw = 1.0 mhz rbw = 30 khz rbw = 300 khz mkr 836 mhz 35.42 dbm center 836 mhz vbw 100 khz span 5.000 mhz swp 2.00 sec .com .com .com .com .com 4 .com u datasheet
17 acpm-7833 demoboard operation instructions 1) module description the acpm-7833 is a fully matched power amplifier. the sample devices are provided on a demon- stration pc board with sma connectors for rf inputs and outputs, and a dc connector for all bias and control i/os. please refer to figures 20 through 23 and the pin configuration table for i/o descriptions and connections. figure 20. acpm-7833 evaluation board schematic and layout. figure 21. layer 1 C top metal & solder mask. vdd2 vdd1 vdd1 gnd rfin vbias vbias rfout rf out gnd vdd2 2.2 f 4700 pf rfin vcntl gnd gnd gnd 4700 pf vcntl 4700 pf 4700 pf c3 c4 rf out rf in pcs 4x4 v2 c1 = 4700 pf c2 = 4700 pf c3 = 2.2 f c4 = 4700 pf c5 = 4700 pf c2 c1 gnd vbias (f) vdd1 (f) vdd2 (f) gnd c5 .com .com .com .com .com 4 .com u datasheet
18 figure 22. layer 2 C ground. figure 23. layer 3 C bottom metal & solder mask. top side back side 1 gnd 1b vdd2 (s) 2 vbias 2b gnd 3 vdd1 3b vdd1 (s) 4 gnd 4b vcntl 5 vdd2 5b vbias (s) pin configuration table .com .com .com .com .com 4 .com u datasheet
19 2) circuit operation the design of the power module (pam) provide bias control via vcntl to achieve optimal rf performance and power control. the control pin is labeled vcntl. please refer to for the block diagram of this pam. typical operation conditions (vdd1=vdd2=vbias = 3.4v) parameter acpm-7833 frequency range 1850 ? 1910 mhz output power 28.5 dbm vcntl 2.5 v 3) maximum ratings vdd 5.0v drain current 1.5a vcntl 3v rf input 10 dbm temperature -30 to 85 c please note: avoid electrostatic discharge on all i/o?s. 4) heat sinking the demonstration pc board provides an adequate heat sink. maximum device dissipation should be kept below 2.5 watts. 5) testing - signal source the cdma modulated signal for the test is generated using an agilent esg-d4000a (or esg- d3000a) digital signal generator with the following settings: cdma setup : reverse spreading: on bits/symbol: 1 data: pn15 modulation: oqpsk chip rate: 1.2288 mcps high crest: on filter: std phase polarity: invert - acpr measurement the acpr (and channel power) is measured using an agilent 4406 vsa with corresponding acpr offsets for is-98c and jstd-8. averaging of 10 is used for acpr measurements. - dc connection a dc connector is provided to allow ease of connection to the i/os. wires can be soldered to the connector pins, or the connector can be removed and i/os contacted via clip leads or direct soldered connections. the wiring of i/os are listed in figures 20 through 23 and the pin configuration table. the vdd sense connections are provided to allow the use of remote- sensing power supplies of compensation for pcb traces and cable resistance. - device operation 1) connect rf input and output for the band under test. 2) terminate all unused rf ports into 50 ohms. 3) connect vdd1, vdd2 and vdd3 supplies (including remote sensing labeled vdd1 s, vdd2 s and vbias s on the board). nominal voltage is 3.4v. 4) connect vcntl supply and set reference voltage to the voltage shown in the data packet. note that the vcntl pin is on the back side of the demonstration board. please limit vcntl to not exceed the corresponding listed dc biasing condition in the data packet. note that increasing vcntl over the corresponding listed dc biasing condition can result in power decrease and current can exceed the rated limit. 5) apply rf input power accord- ing to the values listed in operation data in data packet. 6) power down in opposite sequence. figure 24. power module block diagram. input vdd1 passive input match on chip inter-stage match bias circuit passive output match vdd2 output vcntl single control bias setting for low idq and 40% pae at pout = 28.5 dbm vbias .com .com .com .com .com 4 .com u datasheet
20 ir reflow soldering figure 25 is a straight-line representation of the recom- mended nominal time-tempera- ture profile from jesd22-a113-b ir reflow. figure 25. time-temperature profile for ir reflow soldering process. table 2. ir reflow process zone. process zone ? temperature ? temperature/ ? time preheat zone 25 c to 100 c3 c/s max soak zone 100 c to 150 c 0.5 c/s max (120s max) reflow zone 150 c to 235 c (240 c max) 4.5 c/s typ 235 c to 150 c -4.5 c/s typ cooling zone 150 c to 25 c-6 c/s max table 3. classification reflow profiles. convection or ir/convection average ramp-up rate (183 c to peak) 3 c/second max. preheat temperature 125 ( 25) c 120 seconds max. temperature maintained above 183 c 60 ? 150 seconds time within 5 c of actual peak temperature 10 ? 20 seconds peak temperature range 220 +5/-0 c or 235 +5/-0 c ramp-down rate 6 c/second max. time 25 c to peak temperature 6 minutes max. note: all temperatures measured refer to the package body surface. time (seconds) temperature ( c) 0 50 150 100 200 183 235 60 90 30 120 150 210 180 270 300 240 60 to 150s above 183 c cooling zone reflow zone soak zone preheat zone .com .com .com .com .com 4 .com u datasheet
zone 1 C preheat zone the average heat up rate for surface-mount component on pcb shall be less than 3 c/ second to allow even heating for both the component and pcb. this ramp is maintained until it reaches 100 c where flux activation starts. zone 2 C soak zone the flux is being activated here to prepare for even and smooth solder joint in subsequent zone. the temperature ramp is kept gradual to minimize thermal mismatch between solder, pc board and components. over- ramp rate here can cause solder splatter due to excessive oxida- tion of paste. zone 3 C reflow zone the third process zone is the solder reflow zone. the tempera- ture in this zone rises rapidly from 183 c to peak temperature of 235 c for the solder to trans- form its phase from solid to liquids. the dwell time at melting point 183 c shall maintain at between 60 to 150 seconds. upon the duration of 10-20 seconds at peak temperature, it is then cooled down rapidly to allow the solder to freeze and form solid. extended duration above the solder melting point can poten- tially damage temperature sensitive components and result in excessive inter-metallic growth that causes brittle solder joint, weak and unreliable connections. it can lead to unnecessary dam- age to the pc board and discol- oration to components leads. zone 4 C cooling zone the temperature ramp down rate is 6 c/second maximum. it is important to control the cooling rate as fast as possible in order to achieve the smaller grain size for solder and increase fatigue resistance of solder joint. solder paste the recommended solder paste is type sn6337a or sn60pb40a of j-std-006. note: solder paste storage and shelf life shall be in accordance with manufacturers specifications. stencil or screen the solder paste may be depos- ited onto pcb by either screen printing, using a stencil or syringe dispensing. the recom- mended stencil thickness is in accordance to jesd22-b102-c. nominal stencil thickness component lead pitch 0.102 mm (0.004 in) lead pitch less than 0.508 mm (0.020 in) 0.152 mm (0.006 in) 0.508 mm to 0.635 mm (0.02 in to 0.025 in) 0.203 mm (0.008 in) lead pitch greater than 0.635 mm (0.025 in) www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (65) 6756 2394 india, australia, new zealand: (65) 6755 1939 japan: (+81 3) 3335-8152(domestic/international), or 0120-61-1280(domestic only) korea: (65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (65) 6755 2044 taiwan: (65) 6755 1843 data subject to change. copyright ? 2004 agilent technologies, inc. obsoletes 5989-0403en november 10, 2004 5989-1899en .com .com .com .com 4 .com u datasheet

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